|
Product Details:
|
| Type: | Field-Effect Transistor | Product Name: | AP6982GN2-HF |
|---|---|---|---|
| Quality: | Original | Application: | Home Appliances |
| Logo: | Customized | Vth:: | 0.7V |
| High Light: | 2.4W Transistor Mosfet Module,10mr Transistor Mosfet Module,AP6982GN2-HF Field Effect Transistor |
||
G2012 20V 12A 10mr transistor mosfet alternative for AP6982GN2-HF
Description:
AP6982 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gate-Source Voltage | +8 | V |
| ID@TA=25℃ | Continuous Drain Current3 @ VGS=4.5V | 11 | A |
| ID@TA=70℃ | Continuous Drain Current3 @ VGS=4.5V | 8.7 | A |
| IDM | Pulsed Drain Current1 | 40 | A |
| PD@TA=25℃ | Total Power Dissipation3 | 2.4 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
| Symbol | Parameter | Value | Unit |
| Rthj-a | Maximum Thermal Resistance, Junction-ambient3 | 52 | ℃/W |
Electrical Characteristics@Tj=25oC(unless otherwise specified)
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 20 | - | - | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V, ID=10A | - | 9.3 | 12.5 | mΩ |
| VGS=2.5V, ID=5A | - | 11.3 | 16 | mΩ | ||
| VGS=1.8V, ID=2A | - | 15 | 21 | mΩ | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250uA | 0.3 | 0.5 | 1 | V |
| gfs | Forward Transconductance | VDS=5V, ID=10A | - | 34 | - | S |
| IDSS | Drain-Source Leakage Current | VDS=16V, VGS=0V | - | - | 10 | uA |
| IGSS | Gate-Source Leakage | VGS=+8V, VDS=0V | - | - | +100 | nA |
| Qg | Total Gate Charge |
ID=10A VDS=10V VGS=4.5V |
- | 22 | 35.2 | nC |
| Qgs | Gate-Source Charge | - | 2.5 | - | nC | |
| Qgd | Gate-Drain ("Miller") Charge | - | 7 | - | nC | |
| td(on) | Turn-on Delay Time | VDS=10V | - | 9 | - | ns |
| tr | Rise Time | ID=1A | - | 13 | - | ns |
| td(off) | Turn-off Delay Time | RG=3.3Ω | - | 40 | - | ns |
| tf | Fall Time | VGS=5V | - | 10 | - | ns |
| Ciss | Input Capacitance |
VGS=0V VDS=10V f=1.0MHz |
- | 1500 | 2400 | pF |
| Coss | Output Capacitance | - | 170 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 155 | - | pF | |
| Rg | Gate Resistance | f=1.0MHz | - | 2 | 4 | Ω |
Source-Drain Diode
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| VSD | Forward On Voltage2 | IS=2A, VGS=0V | - | - | 1.2 | V |
| trr | Reverse Recovery Time |
IS=10A, VGS=0V, dI/dt=100A/µs |
- | 11 | - | ns |
| Qrr | Reverse Recovery Charge | - | 5 | - | nC |
Notes:
This product is sensitive to electrostatic discharge, please handle with care.
This product is not authorized to be used as a critical component of a life support system or other similar systems.
APEC shall not be liable for any liability arising from the application or use of any product or circuit described in this agreement, nor shall it assign any license under its patent rights or assign the rights of others.
APEC reserves the right to make changes to any product in this Agreement without notice to improve reliability, function or design.
Contact Person: David
