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AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition

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AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition

AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition
AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition

Large Image :  AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition

Product Details:
Place of Origin: China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: AP1334GEU-HF
Payment & Shipping Terms:
Minimum Order Quantity: Negotiable
Price: Negotiate
Packaging Details: Carton Box
Delivery Time: 4~5 week
Payment Terms: T/T, Western Union, L/C
Supply Ability: 10,000/Month

AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition

Description
Part Number: AP1334GEU-HF Lead Time: In Stock
Rosh: Yes Condition: New
Sample:: Support Type:: Same Datasheets
High Light:

8A Mosfet Power Transistor

,

0.35W Mosfet Power Transistor

,

AP1334GEU-HF Power Switching Transistor

Electronic component AP1334GEU-HF advantage price for original stock

 

Description

 

AP1334 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
 

Absolute Maximum Ratings@Tj=25oC.(unless otherwise specified)

 

Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage +8 V
ID@TA=25℃ Drain Current3, VGS @ 4.5V 2.1 A
ID@TA=70℃ Drain Current3, VGS @ 4.5V 1.7 A
IDM Pulsed Drain Current1 8 A
PD@TA=25℃ Total Power Dissipation 0.35 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150

 

Thermal Data

 

Symbol Parameter Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3 360 ℃/W

 

 AP1334GEU-H

 

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=2A - - 65
VGS=2.5V, ID=1.5A - - 75
VGS=1.8V, ID=1A - - 85
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.3 - 1 V
gfs Forward Transconductance VDS=5V, ID=2A - 12 - S
IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+8V, VDS=0V - - +30 uA
Qg Total Gate Charge

ID=2A

VDS=10V VGS=4.5V

- 9 14.4 nC
Qgs Gate-Source Charge - 1 - nC
Qgd Gate-Drain ("Miller") Charge - 2.5 - nC
td(on) Turn-on Delay Time

VDS=10V ID=1A RG=3.3Ω

VGS=5V

- 6 - ns
tr Rise Time - 7 - ns
td(off) Turn-off Delay Time - 18 - ns
tf Fall Time - 3 - ns
Ciss Input Capacitance

VG.S=0V VDS=10V

f=1.0MHz

- 570 912 pF
Coss Output Capacitance - 70 - pF
Crss Reverse Transfer Capacitance - 60 - pF
Rg Gate Resistance f=1.0MHz - 2.4 4.8 Ω

 

Source-Drain Diode

 

Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2 IS=1.2A, VGS=0V - - 1.2 V
trr Reverse Recovery Time

IS=2A, VGS=0V,

dI/dt=100A/µs

- 14 - ns
Qrr Reverse Recovery Charge - 7 - nC

 

Notes:

 

1.Pulse width limited by Max. junction temperature.
2.Pulse test

3.Surface mounted on FR4 board, t ≦ 10 sec.
 

Our advantages:

 

We have professional team to serve you , professional ERP order system , WSM storage system , Support online purchasing ,Support BOM quotation ,

more all items are with good price and high quality .

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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