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AP2N1K2EN1 IC Chips SOT-723 0.15W 800mA MOSFET Transistor

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AP2N1K2EN1 IC Chips SOT-723 0.15W 800mA MOSFET Transistor

AP2N1K2EN1 IC Chips SOT-723 0.15W 800mA MOSFET Transistor
AP2N1K2EN1 IC Chips SOT-723 0.15W 800mA MOSFET Transistor

Large Image :  AP2N1K2EN1 IC Chips SOT-723 0.15W 800mA MOSFET Transistor

Product Details:
Place of Origin: China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: AP2N1K2EN1
Payment & Shipping Terms:
Minimum Order Quantity: Negotiable
Price: Negotiate
Packaging Details: Carton Box
Delivery Time: 4~5 week
Payment Terms: L/C T/T Western Union
Supply Ability: 10,000/Month

AP2N1K2EN1 IC Chips SOT-723 0.15W 800mA MOSFET Transistor

Description
Model Number:: AP2N1K2EN1 Supplier Type: Original Manufacturer, Odm, Agency, Retailer
Brand Name:: Original Brand Package Type: SOT-723(N1)
D/C: Newest Description:: Transistor
High Light:

800mA MOSFET Transistor

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0.15W MOSFET Transistor

,

AP2N1K2EN1 IC Chips Transistor

MOSFET Transistor AP2N1K2EN1 Original Electronic Component / IC Chips

 

Description

 

AP2N1K2E series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.

 

The SOT-723 Package with very small footprint is suitable for all commercial-industrial surface mount application.

 

Notes:

 

1.Pulse width limited by Max. junction temperature.
2.Pulse test

3.Surface mounted on min. copper pad of FR4 board

 

This product is sensitive to electrostatic discharge, please handle with care.

This product is not authorized to be used as a critical component of a life support system or other similar systems.

APEC shall not be liable for any liability arising from the application or use of any product or circuit described in this agreement, nor shall it assign any license under its patent rights or assign the rights of others.

APEC reserves the right to make changes to any product in this Agreement without notice to improve reliability, function or design.

 

Absolute Maximum Ratings@Tj=25°C(unless otherwise specified)

 

Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage +8 V
ID@TA=25℃ Drain Current3, VGS @ 2.5V 200 mA
IDM Pulsed Drain Current1 400 mA
IS@TA=25℃ Source Current (Body Diode) 125 mA
ISM Pulsed Source Current1(Body Diode) 800 mA
PD@TA=25℃ Total Power Dissipation 0.15 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150

 

Thermal Data

 

Symbol Parameter Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3 833 ℃/W

 

 

 AP2N1K2EN

 

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
RDS(ON) Static Drain-Source On-Resistance2 VGS=2.5V, ID=200mA - - 1.2 Ω
VGS=1.8V, ID=200mA - - 1.4 Ω
VGS=1.5V, ID=40mA - - 2.4 Ω
VGS=1.2V, ID=20mA - - 4.8 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=1mA 0.3 - 1 V
gfs Forward Transconductance VDS=10V, ID=200mA - 1.8 - S
IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+8V, VDS=0V - - +30 uA
Qg Total Gate Charge

ID=200mA VDS=10V

VGS=2.5V

- 0.7 - nC
Qgs Gate-Source Charge - 0.2 - nC
Qgd Gate-Drain ("Miller") Charge - 0.2 - nC
td(on) Turn-on Delay Time VDS=10V - 2 - ns
tr Rise Time ID=150mA - 10 - ns
td(off) Turn-off Delay Time RG=10Ω - 30 - ns
tf Fall Time .VGS=5V - 16 - ns
Ciss Input Capacitance

VGS=0V

VDS=10V f=1.0MHz

- 44 - pF
Coss Output Capacitance - 14 - pF
Crss Reverse Transfer Capacitance - 10 - pF

 

Source-Drain Diode

 

Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2 IS=0.13A, VGS=0V - - 1.2 V

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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