high current transistor online manufacture

TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Switching and Amplification in High Voltage Applications such as Telephony Low Current High Voltage ORDERING INFORMATION Part Number Package ... Read More

SOT-89-3L Plastic-Encapsulate Transistors 2SD965A 2SD965A FEATUREAudio amplifierFlash unit of cameraSwitching circuit Marking :D965A MAXIMUM RATINGS (Ta=25 unless otherwise noted) SymbolParameterValueUnitVCBOCo... Read More

13P10D -100V Mosfet Power Transistor For Power Management ESD Protested DESCRIPTION The 13P10D uses advanced trench technology and design to provide excellent RDS(ON) with low gat e charge. It can be used in a ... Read More

6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as ... Read More

TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR (NPN) FEATURE Power Switching Applications MARKING 13002B=Device code Solid dot=Green molding compound device, if none,the normal device XXX=Code ... Read More

HXY12N10 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of ... Read More

6N60 Z 6.2A 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state ... Read More

50P03NF TO-252 Mosfet Power Transistor For Load Switch Power Management Mosfet Power Transistor DESCRIPTION The 50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and ... Read More

Durable High Speed Power Switching Transistor , Power Darlington Transistor General Description Trench Power MV MOSFET technology Low R DS(ON) Low Gate Charge Optimized for fast-switching applications ... Read More

8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < @V = 4.5V 25m GS z RDS(on) < @V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE ... Read More