high voltage switching diode online manufacture

1N4942 THRU 1N4948 FAST RECOVERY RECTIFIERS Reverse Voltage - 200 to 1000 Volts Forward Current - 1.0 Ampere FEATURE The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Fast ... Read More

FR201 THRU FR207 FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes FEATURE The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Fast ... Read More

WSF3012 N-Ch and P-Channel MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the ... Read More

5N60 K-TCQ 5A 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state ... Read More

2N60-TC3 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, ... Read More

2N60-TC3 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low ... Read More

6N60 Z 6.2A 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state ... Read More

5N20D / Y 200V N-Channel Enhancement Mode MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level ... Read More

Original Complementary Power Transistors / Field Effect Transistor AP5N10LI Complementary Power Transistors Description The AP5N10LI uses advanced trench technology to provide excellent R DS(ON) , low gate ... Read More

13P10D -100V Mosfet Power Transistor For Power Management ESD Protested DESCRIPTION The 13P10D uses advanced trench technology and design to provide excellent RDS(ON) with low gat e charge. It can be used in a ... Read More