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Product Details:
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| Product Name: | Mosfet Power Transistor | APPLICATION: | Power Management |
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| FEATURE: | Excellent RDS(on) | Power Mosfet Transistor: | Enhancement Mode Power MOSFET |
| Model Number: | 4N60 | ||
| High Light: | n channel mosfet transistor,high voltage transistor |
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2N60-TC3 Power MOSFET
2A, 600V N-CHANNEL POWER MOSFET
The UTC 4N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 2.5Ω @VGS = 10 V
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
| Ordering Number | Package | Pin Assignment | Packing | |||
| Lead Free | Halogen Free | 1 | 2 | 3 | ||
| 4N60L-TF1-T | 4N60G-TF1-T | TO-220F1 | G | D | S | Tube |
Note: Pin Assignment: G: Gate D: Drain S: Source
n ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
| PARAMETER | SYMBOL | RATINGS | UNIT | |
| Drain-Source Voltage | VDSS | 600 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Avalanche Current (Note 2) | IAR | 4 | A | |
| Drain Current | Continuous | ID | 4.0 | A |
| Pulsed (Note 2) | IDM | 16 | A | |
| Avalanche Energy | Single Pulsed (Note 3) | EAS | 160 | mJ |
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 4.5 | V/ns | |
| Power Dissipation | PD | 36 | W | |
| Junction Temperature | TJ | +150 | °С | |
| Operating Temperature | TOPR | -55 ~ +150 | °С | |
| Storage Temperature | TSTG | -55 ~ +150 | °С | |
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
4. Repetitive Rating: Pulse width limited by maximum junction temperature.
5. L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
6. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C
| PARAMETER | SYMBOL | RATINGS | UNIT |
| Junction to Ambient | θJA | 62.5 | °С/W |
| Junction to Case | θJc | 3.47 | °С/W |
ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
| OFF CHARACTERISTICS | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 600 | V | |||
| Drain-Source Leakage Current | IDSS | VDS=600V, VGS=0V | 10 | μA | |||
| VDS=480V, TC=125°С | 100 | µA | |||||
| Gate-Source Leakage Current | Forward | IGSS | VGS=30V, VDS=0V | 100 | nA | ||
| Reverse | VGS=-30V, VDS=0V | -100 | nA | ||||
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | ID=250μA,Referenced to 25°C | 0.6 | V/°С | |||
| ON CHARACTERISTICS | |||||||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250μA | 3.0 | 5.0 | V | ||
| Static Drain-Source On-State Resistance | RDS(ON) | VGS=10 V, ID=2.2A | 2.3 | 2.5 | Ω | ||
| DYNAMIC CHARACTERISTICS | |||||||
| Input Capacitance | CISS |
VDS =25V, VGS=0V, f =1MHz |
440 | 670 | pF | ||
| Output Capacitance | COSS | 50 | 100 | pF | |||
| Reverse Transfer Capacitance | CRSS | 6.8 | 20 | pF | |||
| SWITCHING CHARACTERISTICS | |||||||
| Turn-On Delay Time | tD(ON) |
VDD=30V, ID=0.5A, RG=25Ω (Note 1, 2) |
45 | 60 | ns | ||
| Turn-On Rise Time | tR | 35 | 55 | ns | |||
| Turn-Off Delay Time | tD(OFF) | 65 | 85 | ns | |||
| Turn-Off Fall Time | tF | 40 | 60 | ns | |||
| Total Gate Charge | QG | VDS=50V, ID=1.3A, ID=100μA VGS=10V (Note 1, 2) | 15 | 30 | nC | ||
| Gate-Source Charge | QGS | 5 | nC | ||||
| Gate-Drain Charge | QGD | 15 | nC | ||||
| SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS | |||||||
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=4.4A | 1.4 | V | |||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 4.4 | A | ||||
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Maximum Pulsed Drain-Source Diode Forward Current |
ISM | 17.6 | A | ||||
| Reverse Recovery Time | trr |
VGS=0 V, IS=4.4A, dIF/dt=100 A/μs (Note 1) |
250 | ns | |||
| Reverse Recovery Charge | QRR | 1.5 | μC | ||||
Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.
Contact Person: David
