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50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

Name: 50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃
Brand: Hua Xuan Yang
SKU: 50N06P/T
Availability: InStock
ISBN: 12119745

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50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

Large Image : 50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

Product Details:

Place of Origin:	ShenZhen China
Brand Name:	Hua Xuan Yang
Certification:	RoHS、SGS
Model Number:	50N06P/T

Payment & Shipping Terms:

Minimum Order Quantity:	1000-2000 PCS
Price:	Negotiated
Packaging Details:	Boxed
Delivery Time:	1 - 2 Weeks
Payment Terms:	L/C T/T Western Union
Supply Ability:	18,000,000PCS / Per Day

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50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

Description

Product Name:	Mosfet Power Transistor	Junction Temperature::	150℃
Material:	Silicon	Model Number:	50N06P/T
Case:	Tape/Tray/Reel	Type:	Mosfet Transistor
High Light:	logic mosfet switch , mosfet driver using transistor

50N06P/T 200V N-Channel Enhancement Mode MOSFET

Product Summary

The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.