|Product Name:||Mosfet Power Transistor||Model:||AP6H06S|
|VDSDrain-Source Voltage:||60V||VGSGate-Sou Rce Voltage:||±20A|
n channel mosfet transistor,
high voltage transistor
Fast Switching Mosfet Power Transistor AP6H06S 6A 60V Customized
Mosfet Power Transistor Introduction
MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of efficiency to be attained.
There is a number of different varieties of power MOSFET available from different manufacturers, each with its own characteristics and abilities.
Many power MOSFETs incorporate a vertical structure topology. This enables high current switching with high efficiency within a relatively small die area. It also enables the device to support high current and voltage switching.
VDS = 60V ID =6 A
RDS(ON) < 35mΩ @ VGS=10V
Uninterruptible power supply
Package Marking and Ordering Information
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
|Drain Current-Continuous(TC=100℃)||ID (100℃)||3.5||A|
|Pulsed Drain Current||IDM||24||A|
|Maximum Power Dissipation||PD||2||W|
|Operating Junction and Storage Temperature Range||TJ,TSTG||-55 To 150||℃|
|Thermal Resistance,Junction-to-Ambient (Note 2)||RθJA||62.5||℃/W|
Electrical Characteristics (TA=25℃unless otherwise noted)
|Drain-Source Breakdown Voltage||BVDSS||VGS=0V ID=250μA||60||-||-||V|
|Zero Gate Voltage Drain Current||IDSS||VDS=60V,VGS=0V||-||-||1||μA|
|Gate-Body Leakage Current||IGSS||VGS=±20V,VDS=0V||-||-||±100||nA|
|Gate Threshold Voltage||VGS(th)||VDS=VGS,ID=250μA||1.2||1.6||2.5||V|
Drain-Source On-State Resistance
|Reverse Transfer Capacitance||Crss||-||100||-||PF|
|Turn-on Delay Time||td(on)||-||5.2||-||nS|
|Turn-on Rise Time||
|Turn-Off Delay Time||td(off)||-||17||-||nS|
|Turn-Off Fall Time||
|Total Gate Charge||Qg||
|Diode Forward Voltage (Note 3)||VSD||VGS=0V,IS=5A||-||1.2||V|
|Diode Forward Current (Note 2)||
|Forward Turn-On Time||ton||Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)|
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25 Ω
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