|Product Name:||Mosfet Power Transistor||VDS:||30V|
|RDS(ON) < 35mΩ:||(VGS = 4.5V)||Model Number:||HXY4466|
|RDS(ON) < 23mΩ:||(VGS = 10V)||Type:||Mosfet Transistor|
logic mosfet switch,
mosfet driver using transistor
|I = 10A||VGS = 10V)|
|RDS(ON) < 23mΩ||(VGS = 10V)|
|RDS(ON) < 35mΩ||(VGS = 4.5V)|
The HXY4466 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.
Electrical Characteristics (T =25°C unless otherwise noted)
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Contact Person: David