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TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type

Name: TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type
Brand: Hua Xuan Yang
SKU: TO-92 A42

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TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type

Large Image : TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type

Product Details:

Place of Origin:	ShenZhen China
Brand Name:	Hua Xuan Yang
Certification:	RoHS、SGS
Model Number:	TO-92 A42

Payment & Shipping Terms:

Minimum Order Quantity:	1000-2000 PCS
Price:	Negotiated
Packaging Details:	Boxed
Delivery Time:	1 - 2 Weeks
Payment Terms:	L/C T/T Western Union
Supply Ability:	18,000,000PCS / Per Day

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TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type

Description

VCBO:	310V	VCEO:	305V
VEBO:	5V	Product Name:	Silicon Semiconductor Triode Type
Tj:	150℃	Case:	Tape/Tray/Reel
High Light:	tip series transistors , high power pnp transistor

TO-92 Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN)

FEATURE

High voltage

MARKING

A42=Device code
Solid dot=Green molding compound device, if none,the normal device
Z=Rank of hFE
XXX=Code

TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type 0

ORDERING INFORMATION

Part Number	Package	Packing Method	Pack Quantity
A42	TO-92	Bulk	10000
A42-TA	TO-92	Tape	2000

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	310	V
VCEO	Collector-Emitter Voltage	305	V
VEBO	Emitter-Base Voltage	5	V
I _C	Collector Curren t -Continuous	200	mA
I CM	Collector Current - Pulsed	500	mA
P_C	Collector Power Dissipation	625	mW
T_J	Junction Temperature	150	℃
Tstg	Storage Temperature	-55-150	℃
RӨJA	Thermal Resistance, junction to Ambient	200	℃ /mW
RӨJC	Thermal Resistance, junction to Case	83.3	℃ /mW

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=100uA, I_E=0	310			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C=1mA, I_B=0	305			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=100μA, I_C=0	5			V
Collector cut-off current	ICBO	V_CB=200V, I_E=0			0.25	μA
Emitter cut-off current	IEBO	V_EB=5V, I_C=0			0.1	μA
DC current gain	hFE(1)	V_CE=10V, I_C=1mA	60
	hFE(2)	V_CE=10V, I_C=10mA	80		250
	hFE(3)	V_CE=10V, I_C=30mA	75
Collector-emitter saturation voltage	VCE(sat)	I_C=20mA, I_B=2mA			0.2	V
Base-emitter saturation voltage	VBE(sat)	I_C=20mA, I_B=2mA			0.9	V
Transition frequency	f_T	V_CE=20V, I_C=10mA,f=30MH_Z	50			MHz

CLASSIFICATION OF h_FE(2)

RANK	A	B	C
RANGE	100-150	150-200	200-300

Typical Characteristics

TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type 1

TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type 2

TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type 3

TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type 4

Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min	Max	Min	Max
A	3.300	3.700	0.130	0.146
A1	1.100	1.400	0.043	0.055
b	0.380	0.550	0.015	0.022
c	0.360	0.510	0.014	0.020
D	4.300	4.700	0.169	0.185
D1	3.430		0.135
E	4.300	4.700	0.169	0.185
e	1.270 TYP		0.050 TYP
e1	2.440	2.640	0.096	0.104
L	14.100	14.500	0.555	0.571
0		1.600		0.063
h	0.000	0.380	0.000	0.015

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Contact Person: David

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TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type

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CLASSIFICATION OF hFE(2)

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CLASSIFICATION OF h_FE(2)