Home ProductsSemiconductor Triode

TIP117 High Current Transistor , Power Switch Transistor Low Leakage

Certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
Customer Reviews
we cooperation with Hua Xuan Yang is largely due to their professionalism, their keen response to the customization of the products we need, the settlement of all our needs and, above all, They provision of quality services.

—— —— Jason from Canada

Under the recommendation of my friend, we know about Hua Xuan Yang, a senior expert in the semiconductor and electronic components industry, which has enabled us to reduce our precious time and not have to venture try other factories.

—— —— Виктор from Russia

I'm Online Chat Now

TIP117 High Current Transistor , Power Switch Transistor Low Leakage

TIP117 High Current Transistor , Power Switch Transistor Low Leakage
TIP117 High Current Transistor , Power Switch Transistor Low Leakage

Large Image :  TIP117 High Current Transistor , Power Switch Transistor Low Leakage

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: TIP117
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

TIP117 High Current Transistor , Power Switch Transistor Low Leakage

Description
Type: Semiconductor Triode Power Mosfet Transistor: TO-220-3L Plastic - Encapsulated
Product ID: TIP117 Feature: High DC Current Gain
Collector Current: -2A Collector Power Dissipation: 2w
High Light:

electronic components triode

,

semiconductor switch

TO-220-3L Plastic - Encapsulated Transistors TIP117 DARLINGTON TRANSISTOR (NPN)

 

 

FEATURE
  •  High DC Current Gain
  •  Low Collector-Emitter Saturation Voltage
  • Complementary to TIP112
 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -100 V
VCEO Collector-Emitter Voltage -100 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -2 A
PC Collector Power Dissipation 2 W
RθJA Thermal Resistance From Junction To Ambient 63 ℃/W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150

 

 

 

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -100     V
Collector-emitter breakdown voltage V(BR)CEO* IC=-30mA,IB=0 -100     V
Emitter-base breakdown voltage V(BR)EBO IE=-5mA,IC=0 -5     V
Collector cut-off current ICBO VCB=-100V,IE=0     -1 mA
Collector cut-off current ICEO VCE=-50V,IB=0     -2 mA
Emitter cut-off current IEBO VEB=-5V,IC=0     -2 mA

 

DC current gain

hFE(1) VCE=-4V, IC=-1A 1000   12000  
  hFE(2) VCE=-4V, IC=-2A 500      
Collector-emitter saturation voltage VCE(sat) IC=-2A,IB=-8mA     -2.5 V
Base-emitter voltage VBE VCE=-4V, IC=-2A     -2.8 V
Collector output capacitance Cob VCB=-10V,IE=0, f=0.1MHz     200 pF

 

 

TO-220-3L Package Outline Dimensions

 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 4.470 4.670 0.176 0.184
A1 2.520 2.820 0.099 0.111
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.310 0.530 0.012 0.021
c1 1.170 1.370 0.046 0.054
D 10.010 10.310 0.394 0.406
E 8.500 8.900 0.335 0.350
E1 12.060 12.460 0.475 0.491
e 2.540 TYP 0.100 TYP
e1 4.980 5.180 0.196 0.204
F 2.590 2.890 0.102 0.114
h 0.000 0.300 0.000 0.012
L 13.400 13.800 0.528 0.543
L1 3.560 3.960 0.140 0.156
Φ 3.735 3.935 0.147 0.155

 

 

TO-220-3L Plastic-Encapsulate Transistors TIP42/42A/42B/42C TRANSISTOR (PNP)

 

 


 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: Mr. David Lee

Tel: +86 13417075252

Fax: 86-755-83232335

Send your inquiry directly to us (0 / 3000)

Leave a Message

We will call you back soon!