Home ProductsSilicon Power Transistor

MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

Certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
Customer Reviews
we cooperation with Hua Xuan Yang is largely due to their professionalism, their keen response to the customization of the products we need, the settlement of all our needs and, above all, They provision of quality services.

—— —— Jason from Canada

Under the recommendation of my friend, we know about Hua Xuan Yang, a senior expert in the semiconductor and electronic components industry, which has enabled us to reduce our precious time and not have to venture try other factories.

—— —— Виктор from Russia

I'm Online Chat Now

MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors
MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

Large Image :  MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: MMBTA55
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

Description
Junction Temperature: 150 ℃ Type: Triode Transistor
Application: Mobile Power Supply/ Led Driver/motor Control Material: Silicon
Collector Current: 600 MA Storage Temperature: -55~+150℃
High Light:

high frequency transistor

,

power mosfet transistors

SOT-23 Plastic-Encapsulate Transistors MMBTA55 TRANSISTOR (NPN)

 

FEATURE
 

l Driver Transistors

 

Marking :2H

 

 

 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -4 V
IC Collector Current -500 mA
PC Collector Power Dissipation 225 mW
RΘJA Thermal Resistance From Junction To Ambient 556 ℃/W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150

 
 
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -60     V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -60     V
Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -4     V
Collector cut-off current ICBO VCB=-60V, IE=0     -0.1 µA
Collector cut-off current ICEO VCE=-60V, IB=0     -0.1 µA
DC current gain hFE(1) VCE=-1V, IC=-10mA 100   400  
  hFE(2) VCE=-1V, IC=-100mA 100      
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA     -0.25 V
Base-emitter voltage VBE VCE=-1V, IC=-100mA     -1.2 V
Transition frequency fT VCE=-1V,IC=-100mA, f=100MHz 50     MHz

 
 
 

 

 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 0.900 1.150 0.035 0.045
A1 0.000 0.100 0.000 0.004
A2 0.900 1.050 0.035 0.041
b 0.300 0.500 0.012 0.020
c 0.080 0.150 0.003 0.006
D 2.800 3.000 0.110 0.118
E 1.200 1.400 0.047 0.055
E1 2.250 2.550 0.089 0.100
e 0.950 TYP 0.037 TYP
e1 1.800 2.000 0.071 0.079
L 0.550 REF 0.022 REF
L1 0.300 0.500 0.012 0.020
θ

 
 
MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors 0
MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors 1
MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors 2
 
 
 
 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

Send your inquiry directly to us (0 / 3000)

Leave a Message

We will call you back soon!