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MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

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Good quality Tip Power Transistors for sales
Good quality Tip Power Transistors for sales
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MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

China MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors supplier
MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors supplier MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors supplier

Large Image :  MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

Product Details:

Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: MMBTA55

Payment & Shipping Terms:

Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day
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Detailed Product Description
Junction Temperature: 150 ℃ Type: Triode Transistor
Application: Mobile Power Supply/ Led Driver/motor Control Material: Silicon
Collector Current: 600 MA Storage Temperature: -55~+150℃

SOT-23 Plastic-Encapsulate Transistors MMBTA55 TRANSISTOR (NPN)

 

FEATURE
 

l Driver Transistors

 

Marking :2H

 

 

 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -4 V
IC Collector Current -500 mA
PC Collector Power Dissipation 225 mW
RΘJA Thermal Resistance From Junction To Ambient 556 ℃/W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150

 
 
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -60     V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -60     V
Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -4     V
Collector cut-off current ICBO VCB=-60V, IE=0     -0.1 µA
Collector cut-off current ICEO VCE=-60V, IB=0     -0.1 µA
DC current gain hFE(1) VCE=-1V, IC=-10mA 100   400  
  hFE(2) VCE=-1V, IC=-100mA 100      
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA     -0.25 V
Base-emitter voltage VBE VCE=-1V, IC=-100mA     -1.2 V
Transition frequency fT VCE=-1V,IC=-100mA, f=100MHz 50     MHz

 
 
 

 

 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 0.900 1.150 0.035 0.045
A1 0.000 0.100 0.000 0.004
A2 0.900 1.050 0.035 0.041
b 0.300 0.500 0.012 0.020
c 0.080 0.150 0.003 0.006
D 2.800 3.000 0.110 0.118
E 1.200 1.400 0.047 0.055
E1 2.250 2.550 0.089 0.100
e 0.950 TYP 0.037 TYP
e1 1.800 2.000 0.071 0.079
L 0.550 REF 0.022 REF
L1 0.300 0.500 0.012 0.020
θ

 
 
MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors
MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors
MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors
 
 
 
 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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