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A42 Silicon NPN Power Transistors , NPN Power Transistor High Current

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A42 Silicon NPN Power Transistors , NPN Power Transistor High Current

A42 Silicon NPN Power Transistors , NPN Power Transistor High Current
A42 Silicon NPN Power Transistors , NPN Power Transistor High Current

Large Image :  A42 Silicon NPN Power Transistors , NPN Power Transistor High Current

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: A42
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

A42 Silicon NPN Power Transistors , NPN Power Transistor High Current

Description
Collector-Base Voltage: 310V Emitter-Base Voltage: 5V
Tstg: -55~+150℃ Material: Silicon
Collector Current: 600 MA
High Light:

high frequency transistor

,

power mosfet transistors

SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN)

 

 

FEATURE
 

Low Collector-Emitter Saturation Voltage

High Breakdown Voltage

 

Marking :D965A

 

 

 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 310 V
VCEO Collector-Emitter Voltage 305 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 200 mA
ICM Collector Current -Pulsed 500 mA
PC Collector Power Dissipation 500 mW
RθJA Thermal Resistance from Junction to Ambient 250 ℃/W
TJ Junction Temperature 150
Tstg Storage Temperature -55~+150

 
 
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 310     V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 305     V
Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 5     V

 

Collector cut-off current

ICBO VCB=200V,IE=0     0.25 µA
 

 

ICEX

VCE=100V,VX=5V     5 µA
    VCE=300V,VX=5V     10 µA
Emitter cut-off current IEBO VEB=5V,IC=0     0.1 µA

 

DC current gain

hFE(1) VCE=10V, IC=1mA 60      
  hFE(2) VCE=10V, IC=10mA 100   300  
  hFE(3) VCE=10V, IC=30mA 75      
Collector-emitter saturation voltage VCE(sat) IC=20mA,IB=2mA     0.2 V
Base-emitter saturation voltage VBE(sat) IC=20mA,IB=2mA     0.9 V
Transition frequency fT VCE=20V,IC=10mA, f=30MHz 50     MHz

 

 

 
 

 Typical Characteristics

 

A42 Silicon NPN Power Transistors , NPN Power Transistor High Current 0

A42 Silicon NPN Power Transistors , NPN Power Transistor High Current 1

A42 Silicon NPN Power Transistors , NPN Power Transistor High Current 2

 

 

 

 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 1.400 1.600 0.055 0.063
b 0.320 0.520 0.013 0.020
b1 0.400 0.580 0.016 0.023
c 0.350 0.440 0.014 0.017
D 4.400 4.600 0.173 0.181
D1 1.550 REF. 0.061 REF.
E 2.300 2.600 0.091 0.102
E1 3.940 4.250 0.155 0.167
e 1.500 TYP. 0.060 TYP.
e1 3.000 TYP. 0.118 TYP.
L 0.900 1.200 0.035 0.047

 
 
A42 Silicon NPN Power Transistors , NPN Power Transistor High Current 3
 

 

SOT-89-3L Suggested Pad Layout

 

A42 Silicon NPN Power Transistors , NPN Power Transistor High Current 4
 
 
SOT-89-3L Tape and Reel
A42 Silicon NPN Power Transistors , NPN Power Transistor High Current 5
A42 Silicon NPN Power Transistors , NPN Power Transistor High Current 6
A42 Silicon NPN Power Transistors , NPN Power Transistor High Current 7
 
 
 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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