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2N5551 Tip Power Transistors For Electronic Components VCBO 180V

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China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
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2N5551 Tip Power Transistors For Electronic Components VCBO 180V

2N5551 Tip Power Transistors For Electronic Components VCBO 180V
2N5551 Tip Power Transistors For Electronic Components VCBO 180V

Large Image :  2N5551 Tip Power Transistors For Electronic Components VCBO 180V

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: 2N5551
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

2N5551 Tip Power Transistors For Electronic Components VCBO 180V

Description
VCBO: 180V VCEO: 160V
VEBO: 6V Usage: Electronic Components
Tj: 150℃ Case: Tape/Tray/Reel
High Light:

tip pnp transistor

,

tip series transistors

TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR (NPN)

 

 

FEATURE
 

Ÿ General Purpose Switching Application

 

 

MARKING

 

2N5551=Device code

Solid dot=Green molding compound device, if none,the normal device

Z=Rank of hFE

 

2N5551 Tip Power Transistors For Electronic Components VCBO 180V 0

 

 

ORDERING INFORMATION

Part Number Packing Method Pack Quantity
2N5551 Bulk 1000pcs/Bag
2N5551-TA Tape 2000pcs/Box


 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 180 V
VCEO Collector-Emitter Voltage 160 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 0.6 A
PC Collector Power Dissipation 625 mW
R0 JA Thermal Resistance From Junction To Ambient 200 Š /W
Tj Junction Temperature 150 Š
Tstg Storage Temperature -55~+150 Š

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified

 

 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 180     V
Collector-emitter breakdown voltage V(BR)CEO* IC=1mA,IB=0 160     V
Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 6     V
Collector cut-off current ICBO VCB=120V,IE=0     50 nA
Emitter cut-off current IEBO VEB=4V,IC=0     50 nA

 

DC current gain

hFE(1) VCE=5V, IC=1mA 80      
  hFE(2) VCE=5V, IC=10mA 100   300  
  hFE(3) VCE=5V, IC=50mA 50      
Collector-emitter saturation voltage VCE(sat)˄1˅ IC=10mA,IB=1mA     0.15 V
  VCE(sat)˄2˅ IC=50mA,IB=5mA     0.2 V
Base-emitter saturation voltage VBE (sat)˄1˅ IC=10mA,IB=1mA     1 V
  VBE (sat)˄2˅ IC=50mA,IB=5mA     1 V
Collector output capacitance Cob VCB=10V,IE=0, f=1MHz     6 pF
Emitter input capacitance Cib VBE=0.5V,IC=0, f=1MHz     20 pF
Transition frequency fT VCE=10V,IC=10mA, f=100MHz 100   300 MHz

 
  

CLASSIFICATION OF hFE(2)

RANK A B C
RANGE 100-150 150-200 200-300

 

 

 

 

Typical Characteristics

 

2N5551 Tip Power Transistors For Electronic Components VCBO 180V 1

2N5551 Tip Power Transistors For Electronic Components VCBO 180V 2

2N5551 Tip Power Transistors For Electronic Components VCBO 180V 3

2N5551 Tip Power Transistors For Electronic Components VCBO 180V 4


 

 

 

 

 


 
 

 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430   0.135  
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0   1.600   0.063
h 0.000 0.380 0.000 0.015

 

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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