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D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors

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China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
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D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors

D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors
D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors

Large Image :  D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: D882S
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors

Description
VCBO: 40V VCEO: 30V
VEBO: 6V Product Name: Silicon Semiconductor Triode Type
IC: 3A Power Mosfet Transistor: TO-92 Plastic-Encapsulate
High Light:

tip pnp transistor

,

high power pnp transistor

TO-92 Plastic-Encapsulate Transistors D882S TRANSISTOR (NPN)

 

FEATURE

 

Power dissipation

 

 

MARKING

D882=Device code

Solid dot=Green molding compound device, if none,the normal device

Z=Rank of hFE, XXX=Code

 

 

D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors 0

 

 

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
D882S TO-92 Bulk 1000pcs/Bag
D882S-TA TO-92 Tape 2000pcs/Box


 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Para meter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 3 A
PD Collector Power Dissipation 625 mW
R0 JA Thermal Resist ance f rom Junction to Ambient 200 Š / W
Tj Junction Temperature 150 Š
Tstg St orage Temperature -55 ~+150 Š

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC = 100µA, IE=0 40     V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30     V
Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 6     V
Collector cut-off current ICBO VCB= 40V, IE=0     1 μA
Collector cut-off current ICEO VCE= 30V, IB=0     10 μA
Emitter cut-off current IEBO VEB= 6V, IC=0     1 μA
DC current gain hFE VCE=2V, IC= 1A 60   400  
Collector-emitter saturation voltage VCE(sat) IC= 2A, IB= 0.2 A     0.5 V
Base-emitter saturation voltage VBE(sat) IC= 2A, IB= 0.2 A     1.5 V
Transition frequency

 

fT

VCE= 5V , Ic=0.1A

f =10MHz

 

50

80  

 

MHz

 
  

CLASSIFICATION OF hFE(2)

Rank R O Y GR
Range 60-120 100-200 160-320 200-400

 

 

 

 

Typical Characteristics

 

 

D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors 1D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors 2D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors 3D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors 4

 

 

 

 

 

 

 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430   0.135  
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0   1.600   0.063
h 0.000 0.380 0.000 0.015

 

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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