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M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW

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M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW

M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW
M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW

Large Image :  M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: M28S
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW

Description
VCBO: 40V VCEO: 20V
PD: 625mW Product Name: Semiconductor Triode Type
Tstg: -55 ~+150Š Power Mosfet Transistor: TO-92 Plastic-Encapsulate
High Light:

tip pnp transistor

,

tip series transistors

TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP)

 

 

FEATURE

 

Ÿ High DC Current Gain and Large Current Capability

 

 

MARKING

M28S=Device code

Solid dot=Green molding compound device,

 

if none,the normal device

Z=Rank of hFE, XXX=Code

 

 

M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW 0

 

 

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
M28S TO-92 Bulk 1000pcs/Bag
M28S-TA TO-92 Tape 2000pcs/Box


 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Para meter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 1 A
PD Collector Power Dissipation 625 mW
R0 JA Thermal Resist ance f rom Junction to Ambient 200 Š / W
Tj Junction Temperature 150 Š
Tstg Storage Temperature -55 ~+150 Š

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 0.1mA ,IE=0 40     V
Collector-emitter breakdown voltage V(BR) CEO IC=1mA,IB=0 20     V
Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 6     V
Collector cut-off current ICBO VCB=40V,IE=0     1 µA
Collector cut-off current ICEO VCE=20V,IB=0     5 µA
Emitter cut-off current IEBO VEB=5V,IC=0     0.1 µA

 

 

DC current gain

hFE(1) VCE=1V, IC=1mA 290      
  hFE(2) VCE=1V, IC=100mA 300   1000  
  hFE(3) VCE=10V, IC=300mA 300      
  hFE(4) VCE=1V, IC=500mA 300      
Collector-emitter saturation voltage VCE(sat) IC=600mA,IB=20mA     0.55 V
Transition frequency fT VCE=10V,IE=50mA ,f=30MHz 100     MHz

 
  

CLASSIFICATION OF hFE(2)

RANK B C D
RANGE 300-550 500-700 650-1000

 

 

 

 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430   0.135  
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0   1.600   0.063
h 0.000 0.380 0.000 0.015

 

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: Mr. David Lee

Tel: +86 13417075252

Fax: 86-755-83232335

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