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B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

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B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit
B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

Large Image :  B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: B772
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

Description
Collector Power Dissipation: 1.25W VCEO: -30V
VEBO: -6V Product Name: Semiconductor Triode Type
Tj: 150℃ Type: Triode Transistor
High Light:

tip pnp transistor

,

high power pnp transistor

TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP)

 

 

FEATURE
 


Low Speed Switching

 

 

MARKING

B772=Device code

Solid dot = Green molding compound device, if none, the normal device XX=Code

 

B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit 0

 

 

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
B772 TO-126 Bulk 200pcs/Bag
B772-TU TO-126 Tube 60pcs/Tube


 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -3 A
PC Collector Power Dissipation 1.25 W
RӨJA Thermal Resistance from Junction to Ambient 100 ℃/W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-100μA ,IE=0 -40     V
Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -30     V
Emitter-base breakdown voltage V(BR)EBO IE= -100μA,IC=0 -6     V
Collector cut-off current ICBO VCB= -40V, IE=0     -1 μA
Collector cut-off current ICEO VCE=-30V, IB=0     -10 μA
Emitter cut-off current IEBO VEB=-6V, IC=0     -1 μA
DC current gain hFE VCE= -2V, IC= -1A 60   400  
Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A     -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A     -1.5 V

 

Transition frequency

fT

VCE= -5V, IC=-0.1A

f =10MHz

 

50

 

80

 

 

MHz

 
  

CLASSIFICATION OF hFE(2)

Rank R O Y GR
Range 60-120 100-200 160-320 200-400

 

 

 


Typical Characteristics

B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit 1B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit 2B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit 3

 

 

 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430   0.135  
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0   1.600   0.063
h 0.000 0.380 0.000 0.015

 

 

B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit 4

 

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: Mr. David Lee

Tel: +86 13417075252

Fax: 86-755-83232335

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