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PNP Tip Power Transistors TO-251-3L Plastic Encapsulated B772 Low Speed Switching

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China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
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PNP Tip Power Transistors TO-251-3L Plastic Encapsulated B772 Low Speed Switching

PNP Tip Power Transistors TO-251-3L Plastic Encapsulated B772 Low Speed Switching
PNP Tip Power Transistors TO-251-3L Plastic Encapsulated B772 Low Speed Switching

Large Image :  PNP Tip Power Transistors TO-251-3L Plastic Encapsulated B772 Low Speed Switching

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: B772
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

PNP Tip Power Transistors TO-251-3L Plastic Encapsulated B772 Low Speed Switching

Description
Collector-Base VoltageCollector-Base Voltage: 40v Collector-Emitter Voltage: 30v
Emitter-Base Voltage: -6V Product Name: Semiconductor Triode Type
Tj: 150℃ Type: Triode Transistor
High Light:

tip pnp transistor

,

tip series transistors

TO-126 Plastic-Encapsulated Transistors B772 TRANSISTOR (PNP)

 

 

FEATURE
 


Low Speed Switching
 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)
 

SymbolParameterValueUnit
VCBOCollector-Base Voltage-40V
VCEOCollector-Emitter Voltage-30V
VEBOEmitter-Base Voltage-6V
ICCollector Current -Continuous-3A
PCCollector Power Dissipation1.25W
RӨJAThermal Resistance, junction to Ambient100℃/W
TjJunction Temperature150
TstgStorage Temperature-55-150

 
 
 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=-100μA ,IE=0-40  V
Collector-emitter breakdown voltageV(BR)CEOIC= -10mA , IB=0-30  V
Emitter-base breakdown voltageV(BR)EBOIE= -100μA,IC=0-6  V
Collector cut-off currentICBOVCB= -40V, IE=0  -1μA
Collector cut-off currentICEOVCE=-30V, IB=0  -10μA
Emitter cut-off currentIEBOVEB=-6V, IC=0  -1μA
DC current gainhFEVCE= -2V, IC= -1A60 400 
Collector-emitter saturation voltageVCE(sat)IC=-2A, IB= -0.2A  -0.5V
Base-emitter saturation voltageVBE(sat)IC=-2A, IB= -0.2A  -1.5V

 

Transition frequency

fT

VCE= -5V, IC=-0.1A

f =10MHz

 

50

 

80

 

 

MHz

 
  

CLASSIFICATION OF hFE(2)

RankROYGR
Range60-120100-200160-320200-400

 
 
 

 Package Outline Dimensions
 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A3.3003.7000.1300.146
A11.1001.4000.0430.055
b0.3800.5500.0150.022
c0.3600.5100.0140.020
D4.3004.7000.1690.185
D13.430 0.135 
E4.3004.7000.1690.185
e1.270 TYP0.050 TYP
e12.4402.6400.0960.104
L14.10014.5000.5550.571
0 1.600 0.063
h0.0000.3800.0000.015

 
 
PNP Tip Power Transistors TO-251-3L Plastic Encapsulated B772 Low Speed Switching 0
 
 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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