TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

Name: TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material
Brand: Hua Xuan Yang
SKU: B772M
Rating: 4.7 (167 reviews)

All Products

Mosfet Power Transistor
(118)

Tip Power Transistors
(30)

Silicon Power Transistor
(19)

Dual Switching Diode
(15)

Mos Field Effect Transistor
(29)

Dual Channel Mosfet
(10)

Fast Recovery Rectifier Diode
(6)

Power Zener Diode
(6)

Schottky Bridge Rectifier
(10)

High Voltage Rectifier Diode
(15)

Semiconductor Triode
(9)

Voltage Stabilizer IC
(14)

Certification

Customer Reviews

we cooperation with Hua Xuan Yang is largely due to their professionalism, their keen response to the customization of the products we need, the settlement of all our needs and, above all, They provision of quality services.

—— —— Jason from Canada

Under the recommendation of my friend, we know about Hua Xuan Yang, a senior expert in the semiconductor and electronic components industry, which has enabled us to reduce our precious time and not have to venture try other factories.

—— —— Виктор from Russia

I'm Online Chat Now

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

Large Image : TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

Product Details:

Place of Origin:	ShenZhen China
Brand Name:	Hua Xuan Yang
Certification:	RoHS、SGS
Model Number:	B772M

Payment & Shipping Terms:

Minimum Order Quantity:	1000-2000 PCS
Price:	Negotiated
Packaging Details:	Boxed
Delivery Time:	1 - 2 Weeks
Payment Terms:	L/C T/T Western Union
Supply Ability:	18,000,000PCS / Per Day

Contact Now

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

Description

VCBO:	-40V	VCEO:	-30V
Storage Temperature:	-55-150℃	Power Mosfet Transistor:	TO-251-3L Plastic-Encapsulate
Material:	Silicon	Type:	Triode Transistor
High Light:	tip series transistors , high power pnp transistor

TO-251-3L Plastic-Encapsulate Transistors B772M TRANSISTOR (PNP)

FEATURES

Low Speed Switching

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-40	V
VCEO	Collector-Emitter Voltage	-30	V
VEBO	Emitter-Base Voltage	-6	V
I_C	Collector Current -Continuous	-3	A
P_C	Collector Power Dissipation	1.25	W
RӨJA	Thermal Resistance, junction to Ambient	100	℃/W
T_j	Junction Temperature	150	℃
Tstg	Storage Temperature	-55-150	℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=-100μA ,I_E=0	-40			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C= -10mA , I_B=0	-30			V
Emitter-base breakdown voltage	V(BR)EBO	I_E= -100μA,I_C=0	-6			V
Collector cut-off current	ICBO	V_CB= -40V, I_E=0			-1	μA
Collector cut-off current	ICEO	V_CE=-30V, I_B=0			-10	μA
Emitter cut-off current	IEBO	V_EB=-6V, I_C=0			-1	μA
DC current gain	hFE	V_CE= -2V, I_C= -1A	60		400
Collector-emitter saturation voltage	VCE(sat)	I_C=-2A, I_B= -0.2A			-0.5	V
Base-emitter saturation voltage	VBE(sat)	I_C=-2A, I_B= -0.2A			-1.5	V
Transition frequency	fT	V_CE= -5V, I_C=-0.1A f =10MHz	50	80		MHz

CLASSIFICATION OF h_FE(2)

Rank	R	O	Y	GR
Range	60-120	100-200	160-320	200-400

Typical Characteristics

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material 0

Symbol	Dimensions In Millimeters		Dimensions In Inches
Symbol	Min.	Max.	Min.	Max.
A	2.200	2.380	0.087	0.094
A1	0.000	0.100	0.000	0.004
B	0.800	1.400	0.031	0.055
b	0.710	0.810	0.028	0.032
c	0.460	0.560	0.018	0.022
c1	0.460	0.560	0.018	0.022
D	6.500	6.700	0.256	0.264
D1	5.130	5.460	0.202	0.215
E	6.000	6.200	0.236	0.244
e	2.286 TYP.		0.090 TYP.
e1	4.327	4.727	0.170	0.186
M	1.778REF.		0.070REF.
N	0.762REF.		0.018REF.
L	9.800	10.400	0.386	0.409
L1	2.9REF.		0.114REF.
L2	1.400	1.700	0.055	0.067
V	4.830 REF.		0.190 REF.
ĭ	1.100	1.300	0.043	0.0±1

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material 4

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material 5

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material 6

Tag:

Contact Person: Mr. David Lee

Tel: +86 13417075252

Fax: 86-755-83232335

Other Products

PNP Tip Power Transistors TO-251-3L Plastic Encapsulated B772 Low Speed Switching

Collector-Base VoltageCollector-Base Voltage: 40v
Collector-Emitter Voltage: 30v
Emitter-Base Voltage: -6V
Product name: semiconductor triode type

B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

Collector Power Dissipation: 1.25W
VCEO: -30V
VEBO: -6V
Product name: semiconductor triode type

MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type

Type: Triode Transistor
Material: Silicon
Power mosfet transistor: TO-126 Plastic-Encapsulate
Product name: semiconductor triode type

D882 NPN Transistor Circuit , NPN Power Transistor Collector Emitter Voltage 30v

Collector-Base VoltageCollector-Base Voltage: 40v
Collector-Emitter Voltage: 30v
Emitter-Base Voltage: 6V
Power mosfet transistor: TO-126 Plastic-Encapsulate

A733 PNP Tip Power Transistors TO-92 Plastic - Encapsulate Transistors

VCBO: -60V
VCEO: -50V
VEBO: -5V
Product name: silicon semiconductor triode type

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

Mosfet Power Transistor

Tip Power Transistors

Silicon Power Transistor

Dual Switching Diode

Mos Field Effect Transistor

Dual Channel Mosfet

Fast Recovery Rectifier Diode

Power Zener Diode

Schottky Bridge Rectifier

High Voltage Rectifier Diode

Semiconductor Triode

Voltage Stabilizer IC

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

tip series transistors

high power pnp transistor

CLASSIFICATION OF h_FE(2)

high power pnp transistor,

tip series transistors,

tip pnp transistor

PNP Tip Power Transistors TO-251-3L Plastic Encapsulated B772 Low Speed Switching

B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type

D882 NPN Transistor Circuit , NPN Power Transistor Collector Emitter Voltage 30v

A733 PNP Tip Power Transistors TO-92 Plastic - Encapsulate Transistors

Mosfet Power Transistor

HXY4616 Logic Level Transistor , High Voltage Transistor 30V Complementary MOSFET

HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v

20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

tip series transistors

high power pnp transistor

CLASSIFICATION OF hFE(2)

high power pnp transistor,

tip series transistors,

CLASSIFICATION OF h_FE(2)