6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A

Name: 6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A
Brand: Hua Xuan Yang
SKU: Hua Xuan Yang
Rating: 4.9 (118 reviews)

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6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A

Large Image : 6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A

Product Details:

Place of Origin:	ShenZhen China
Brand Name:	Hua Xuan Yang
Certification:	RoHS、SGS

Payment & Shipping Terms:

Minimum Order Quantity:	1000-2000 PCS
Price:	Negotiated
Packaging Details:	Boxed
Delivery Time:	1 - 2 Weeks
Payment Terms:	L/C T/T Western Union
Supply Ability:	18,000,000PCS / Per Day

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6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A

Description

Model Number:	6G03S	Product Name:	Mosfet Power Transistor
RDS(ON):	< 37mΩ	ID:	6.5A
FEATURE:	Low Gate Charge	VGS:	-10V
High Light:	n channel mosfet transistor , high current mosfet switch

6G03S 30V N+P-Channel Enhancement Mode MOSFET

Description

The 6G03S uses advanced trench

technology to provide excellent R_DS(ON) and low gate charge .

The complementary MOSFETs may be used to form a

level shifted high side switch, and for a host of other

applications

General Features

N-channel P-channel

N-Channel

V_DS = 30V,I_D =6.5A

R_DS(ON) < 16mΩ@ V_GS=10V

P-Channel

V_DS = -30V,I_D = -7A

R_DS(ON) < 37mΩ @ V_GS=-10V

High power and current handing capability

Lead free product is acquired

Surface mount package

Application

● Power switching application

● Hard Switched and High Frequency Circuits

● Uninterruptible Power Supply

Package Marking and Ordering Information

6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A 0

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

N-CH Electrical Characteristics (TA=25℃unless otherwise noted)

6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A 2

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

30V N+P-Channel EnhancemeN- Channel Typical Electrical and Thermal Characteristics (Curves)

Tag:

Contact Person: Mr. David Lee

Tel: +86 13417075252

Fax: 86-755-83232335

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6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A

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