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2N7002 Enhancement Mode Field Effect Transistor VDSS 20v ID 6.0 A

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2N7002 Enhancement Mode Field Effect Transistor VDSS 20v ID 6.0 A

2N7002 Enhancement Mode Field Effect Transistor VDSS 20v ID  6.0 A
2N7002 Enhancement Mode Field Effect Transistor VDSS 20v ID  6.0 A

Large Image :  2N7002 Enhancement Mode Field Effect Transistor VDSS 20v ID 6.0 A

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

2N7002 Enhancement Mode Field Effect Transistor VDSS 20v ID 6.0 A

Description
Model Number: HXY2312 Product Name: Mosfet Power Transistor
Junction Temperature:: 150℃ Material: Silicon
Case: Tape/Tray/Reel Type: Mosfet Transistor
High Light:

high current transistor

,

logic mosfet switch

SOT-23 Plastic-Encapsulate MOSFETS 2N7002
 
 

 

Product Summary

 

ID= 6.0 A   VDSS=20v
RDS(on) <32 mΩ VGS =4.5V
RDS(on) <40 mΩ  VGS =2.5V
 
 
FEATURE 
 
TrenchFET Power MOSFET
 
 
APPLICATION
 
 
DC/DC Converters
Load Switching for Portable Applications
 
 
Maximum ratings (Ta=25℃ unless otherwise noted)
 
 
T =25 a ℃ unless otherwise specified
 
 
 
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Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: Mr. David Lee

Tel: +86 13417075252

Fax: 86-755-83232335

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