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18N20X 200V Mos Field Effect Transistor Low Gate Charge For Switching Application

Name: 18N20X 200V Mos Field Effect Transistor Low Gate Charge For Switching Application
Brand: Hua Xuan Yang
SKU: Hua Xuan Yang
Rating: 4.6 (171 reviews)

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18N20X 200V Mos Field Effect Transistor Low Gate Charge For Switching Application

Large Image : 18N20X 200V Mos Field Effect Transistor Low Gate Charge For Switching Application

Product Details:

Place of Origin:	ShenZhen China
Brand Name:	Hua Xuan Yang
Certification:	RoHS、SGS

Payment & Shipping Terms:

Minimum Order Quantity:	1000-2000 PCS
Price:	Negotiated
Packaging Details:	Boxed
Delivery Time:	1 - 2 Weeks
Payment Terms:	L/C T/T Western Union
Supply Ability:	18,000,000PCS / Per Day

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18N20X 200V Mos Field Effect Transistor Low Gate Charge For Switching Application

Description

Model Number:	HXY2312	Product Name:	Mosfet Power Transistor
Junction Temperature::	150℃	Material:	Silicon
Case:	Tape/Tray/Reel	Type:	Mosfet Transistor
High Light:	high current transistor , mosfet driver using transistor

18N20X 200V N-Channel Enhancement Mode MOSFET

Product Summary

The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.