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Product Details:
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| Product Name: | High Voltage Mosfet Transistor | Model Number: | 1503C1 |
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| R DS(ON) = 7.1mΩ(typ.): | @V GS = 10V | R DS(ON) = 10.0 MΩ(typ.): | @V GS = 4.5V |
| Feature: | Rugged | Type: | Original |
| High Light: | n channel mosfet transistor,high voltage transistor |
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Original High Voltage Mosfet Transistor , Mosfet Driver Using Transistor
High Voltage Mosfet Transistor Working and Characteristics
The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the heavily doped layer with a low resistive material and the N- layer is a lightly doped layer with the high resistance region.
High Voltage Mosfet Transistor Feature Description
30V/34A
R DS(ON) = 7.1mΩ(typ.)@V GS = 10V
R DS(ON) = 10.0 mΩ(typ.)@V GS = 4.5V
100% Avalanche Tested
Reliable and Rugged
Halogen Free and Green Devices Available
(RoHS Compliant)
High Voltage Mosfet Transistor Applications
Switching Application
Power Management for DC/DC
Battery Protection
Ordering and Marking Information
C1
1503
YYXXXJWW
Package Code
C1: DFN3*3-8L
Date Code
YYXXX WW
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines
“Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-
oduct and/or to this document at any time without notice.
Absolute Maximum Ratings
Typical Operating Characteristics
Contact Person: David
