Home ProductsMosfet Power Transistor

Fast Switching Mosfet Power Transistor AP6H06S 6A 60V Customized

Certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
Customer Reviews
we cooperation with Hua Xuan Yang is largely due to their professionalism, their keen response to the customization of the products we need, the settlement of all our needs and, above all, They provision of quality services.

—— —— Jason from Canada

Under the recommendation of my friend, we know about Hua Xuan Yang, a senior expert in the semiconductor and electronic components industry, which has enabled us to reduce our precious time and not have to venture try other factories.

—— —— Виктор from Russia

I'm Online Chat Now

Fast Switching Mosfet Power Transistor AP6H06S 6A 60V Customized

Fast Switching Mosfet Power Transistor AP6H06S 6A 60V Customized
Fast Switching Mosfet Power Transistor AP6H06S 6A 60V Customized Fast Switching Mosfet Power Transistor AP6H06S 6A 60V Customized

Large Image :  Fast Switching Mosfet Power Transistor AP6H06S 6A 60V Customized

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: AP6H06S
Payment & Shipping Terms:
Minimum Order Quantity: Negotiation
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

Fast Switching Mosfet Power Transistor AP6H06S 6A 60V Customized

Description
Product Name: Mosfet Power Transistor Model: AP6H06S
Pack: SOP-8 Marking: AP6H06S
VDSDrain-Source Voltage: 60V VGSGate-Sou Rce Voltage: ±20A
High Light:

n channel mosfet transistor

,

high voltage transistor

Fast Switching Mosfet Power Transistor AP6H06S 6A 60V Customized

 

Mosfet Power Transistor Introduction

 

MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of efficiency to be attained.

There is a number of different varieties of power MOSFET available from different manufacturers, each with its own characteristics and abilities.

Many power MOSFETs incorporate a vertical structure topology. This enables high current switching with high efficiency within a relatively small die area. It also enables the device to support high current and voltage switching.

 

 

General Features


VDS = 60V ID =6 A
RDS(ON) < 35mΩ @ VGS=10V

 

Application

 

Battery protection
Load switch
Uninterruptible power supply

 

 

Package Marking and Ordering Information

 

Product ID Pack Marking Qty(PCS)
AP6H06S SOP-8 AP6H06S 3000

 

Absolute Maximum Ratings (TA=25unless otherwise noted)

 

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 6 A
Drain Current-Continuous(TC=100℃) ID (100℃) 3.5 A
Pulsed Drain Current IDM 24 A
Maximum Power Dissipation PD 2 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 62.5 ℃/W

 

Electrical Characteristics (TA=25unless otherwise noted)

 

 

Parameter Symbol Condition Min Typ Max Unit
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 - - V
Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 μA
Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.2 1.6 2.5 V

 

Drain-Source On-State Resistance

RDS(ON) VGS=10V, ID=5A - 26 35 mΩ
RDS(ON) VGS=4.5V, ID=5A - 32 45 mΩ
Forward Transconductance gFS VDS=5V,ID=5A 11 - - S
Input Capacitance Clss   - 979 - PF
Output Capacitance Coss - 120 - PF
Reverse Transfer Capacitance Crss - 100 - PF
Turn-on Delay Time td(on)   - 5.2 - nS
Turn-on Rise Time

r

t

- 3 - nS
Turn-Off Delay Time td(off) - 17 - nS
Turn-Off Fall Time

f

t

- 2.5 - nS
Total Gate Charge Qg

 

VDS=30V,ID=5A,

- 22   nC
Gate-Source Charge Qgs - 3.3   nC
Gate-Drain Charge Qgd - 5.2   nC
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=5A -   1.2 V
Diode Forward Current (Note 2)

S

I

  - - 5 A
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 

Notes:

 

1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition:Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25 Ω

 

Attention

 

1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.

7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

Send your inquiry directly to us (0 / 3000)

Leave a Message

We will call you back soon!