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Switch Mode Power Supplies SMPS Mosfet Power Transistor 50A 100V

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Switch Mode Power Supplies SMPS Mosfet Power Transistor 50A 100V

Switch Mode Power Supplies SMPS Mosfet Power Transistor 50A 100V
Switch Mode Power Supplies SMPS Mosfet Power Transistor 50A 100V Switch Mode Power Supplies SMPS Mosfet Power Transistor 50A 100V Switch Mode Power Supplies SMPS Mosfet Power Transistor 50A 100V

Large Image :  Switch Mode Power Supplies SMPS Mosfet Power Transistor 50A 100V

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: AP50N10P
Payment & Shipping Terms:
Minimum Order Quantity: Negotiation
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

Switch Mode Power Supplies SMPS Mosfet Power Transistor 50A 100V

Description
Product Name: Mosfet Power Transistor Model: AP50N10P
Pack: TO-220-3L Marking: AP50P10P XXX YYYY
VDSDrain-Source Voltage: 100V VGSGate-Sou Rce Voltage: ±20V
High Light:

n channel mosfet transistor

,

high voltage transistor

Switch Mode Power Supplies SMPS Mosfet Power Transistor 50A 100V

 

Mosfet Power Transistor Description:

 

The AP50N10P uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.

 

Mosfet Power Transistor Features

 

VDS = 100V ID =50 A
RDS(ON) < 22mΩ @ VGS=10V

 

 

Package Marking and Ordering Information

 

Product ID Pack Marking Qty(PCS)
AP50P10P TO-220-3L AP50P10P XXX YYYY 1000

 

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

 

Symbol Parameter Rating Units
VDS Drain-Source Voltage 100 V
VGS Gate-Sou rce Voltage ±20 V
ID@TC=25℃ Continuous Drain Current, V GS @ 10V 1 50 A
ID@TC=100 ℃ Continuous Drain Current, V GS @ 10V 1 37 A
IDM Pulsed Drain Current2 130 A
EAS Single Pulse Avalanche Energy 3 84 mJ
IAS Avalanche Current 41 A
PD@TC=25 ℃ Total Power Dissipation4 149 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W
RθJC Thermal Resistance Junction-Case 1 0.84 ℃/W

 

Electrical Characteristics (T J=25, unless otherwise noted)

 

Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
RDS(ON) Static Drain-Source On-Resistance VGS=10V , I D=30A --- --- 22
VGS(th) Gate Threshold Voltage VGS=VDS , I =250uA 2.5 --- 4.5 V

 

IDSS

 

Drain-Source Leakage Current

VDS=80V , VGS=0V , TJ=25℃ --- --- 1

 

uA

VDS=80V , VGS=0V , TJ=55℃ --- --- 5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=30A --- 31 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.9 3.8 Ω
Qg Total Gate Charge (10V)   --- 27.6 ---  
Qgs Gate-Source Charge --- 11.4 ---
Qgd Gate-Drain Charge --- 7.9 ---
Td(on) Turn-On Delay Time

 

VDD=50V , VGS=10V ,

--- 16.5 ---  
Tr Rise Time --- 35 ---
Td(off) Turn-Off Delay Time --- 17.5 ---
Tf Fall Time --- 12 ---
Ciss Input Capacitance   --- 1890 ---  
Coss Output Capacitance --- 268 ---
Crss Reverse Transfer Capacitance --- 67 ---
IS Continuous Source Current 1,5

 

VG=VD=0V , Force Current

--- --- 58 A
ISM Pulsed Source Current 2,5 --- --- 130 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V
trr Reverse Recovery Time

 

IF=30A , dI/dt=100A/µs ,

--- 22 --- nS
Qrr Reverse Recovery Charge --- 20 --- nC
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
RDS(ON) Static Drain-Source On-Resistance VGS=10V , I D=30A --- --- 22
VGS(th) Gate Threshold Voltage VGS=VDS , I =250uA 2.5 --- 4.5 V

 

IDSS

 

Drain-Source Leakage Current

VDS=80V , VGS=0V , TJ=25℃ --- --- 1

 

uA

VDS=80V , VGS=0V , TJ=55℃ --- --- 5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=30A --- 31 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.9 3.8 Ω
Qg Total Gate Charge (10V)   --- 27.6 ---  
Qgs Gate-Source Charge --- 11.4 ---
Qgd Gate-Drain Charge --- 7.9 ---
Td(on) Turn-On Delay Time

 

VDD=50V , VGS=10V ,

--- 16.5 ---  
Tr Rise Time --- 35 ---
Td(off) Turn-Off Delay Time --- 17.5 ---
Tf Fall Time --- 12 ---
Ciss Input Capacitance   --- 1890 ---  
Coss Output Capacitance --- 268 ---
Crss Reverse Transfer Capacitance --- 67 ---
IS Continuous Source Current 1,5

 

VG=VD=0V , Force Current

--- --- 58 A
ISM Pulsed Source Current 2,5 --- --- 130 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V
trr Reverse Recovery Time

 

IF=30A , dI/dt=100A/µs ,

--- 22 --- nS
Qrr Reverse Recovery Charge --- 20 --- nC

 

Note :

1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDS=25V,VGS=10V,L=0.1mH,IAS =41A

4.The power dissipation is limited by 150℃ junction temperature

5.The data is theoretically the same as IDand IDM, in real applications , should be limited by total power dissipation.

 

Attention

 

1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

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8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

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