|
Product Details:
|
| Application:: | Power Switch Circuits | Model Number:: | APEC |
|---|---|---|---|
| Supplier Type:: | Original Manufacturer, Agency, Retailer | VDS:: | 30V |
| Operating Temperature:: | -55 To 150 | VGS:: | -20V To 20V |
| High Light: | BOM Quotation Mosfet Power Transistor,BOM Quotation Mosfet Power Transistor,AP2344GN-H MOSFET Transistor |
||
Wholesale electronic components Support BOM Quotation AP2344GN-H
Description
AP2344 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gate-Source Voltage | +8 | V |
| ID@TA=25℃ | Drain Current3, VGS @ 4.5V | 6.4 | A |
| ID@TA=70℃ | Drain Current3, VGS @ 4.5V | 5.1 | A |
| IDM | Pulsed Drain Current1 | 20 | A |
| PD@TA=25℃ | Total Power Dissipation | 1.38 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
Thermal Data
| Symbol | Parameter | Value | Unit |
| Rthj-a | Maximum Thermal Resistance, Junction-ambient3 | 90 | ℃/W |
Electrical Characteristics@Tj=25oC(unless otherwise specified)
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 20 | - | - | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V, ID=6A | - | - | 22 | mΩ |
| VGS=2.5V, ID=4A | - | - | 32 | mΩ | ||
| VGS=1.8V, ID=2A | - | - | 40 | mΩ | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250uA | 0.4 | - | 1 | V |
| ID(ON) | On state drain current | VGS=4.5V, VDS=5V | 30 | - | - | A |
| gfs | Forward Transconductance | VDS=5V, ID=6A | - | 27 | - | S |
| IDSS | Drain-Source Leakage Current | VDS=16V, VGS=0V | - | - | 1 | uA |
| IGSS | Gate-Source Leakage | VGS=+8V, VDS=0V | - | - | +10 | uA |
| Qg | Total Gate Charge |
ID=6A VDS=10V VGS=4.5V |
- | 22 | 35.2 | nC |
| Qgs | Gate-Source Charge | - | 2 | - | nC | |
| Qgd | Gate-Drain ("Miller") Charge | - | 6 | - | nC | |
| td(on) | Turn-on Delay Time | VDS=10V | - | 8 | - | ns |
| tr | Rise Time | ID=1A | - | 11 | - | ns |
| td(off) | Turn-off Delay Time | RG=3.3Ω | - | 38 | - | ns |
| tf | Fall Time | VGS=5V | - | 7 | - | ns |
| Ciss | Input Capacitance |
VGS=0V VDS=10V f=1.0MHz |
- | 1520 | 2430 | pF |
| Coss | Output Capacitance | - | 175 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 155 | - | pF | |
| Rg | Gate Resistance | f=1.0MHz | - | 1.2 | 2.4 | Ω |
Source-Drain Diode
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| VSD | Forward On Voltage2 | IS=1.2A, VGS=0V | - | - | 1.2 | V |
| trr | Reverse Recovery Time |
IS=6A, VGS=0V, dI/dt=100A/µs |
- | 16 | - | ns |
| Qrr | Reverse Recovery Charge | - | 8 | - | nC |
FAQ
1.What is our company good at selling and producing?
1B.We have more than 14 years experience on electronic components agency and sales.
And we have our own R&D team and SMT factory on PCBA products
2.What are our strengths?
2B. We provide service to lots of big brand in China.
For electronic components: Our product line is full with different brand and different brand, you can always find the one match your requirement.
For PCBA: We have our own R&D team and SMT factory, accpet OEM. Leadtime and quality is under control.
3.If we have so many items in the BOM list, how long will it take me to get the quotation?
3B.All quotation with be provide within 2 working days
4.How about the quality of your products?How long is the warranty on your product?(Different products)
4B.We promise all product is 100% good.
5. What's your delivery time?(Spot/Custom)
5B.1 week
Contact Person: David
