Collector-Base VoltageCollector-Base Voltage:40v
Collector-Emitter Voltage:30v
Emitter-Base Voltage:-6V
Collector Power Dissipation:1.25W
VCEO:-30V
VEBO:-6V
Type:Triode Transistor
Material:Silicon
Power mosfet transistor:TO-126 Plastic-Encapsulate
Collector-Base VoltageCollector-Base Voltage:40v
Collector-Emitter Voltage:30v
Emitter-Base Voltage:6V
VCBO:-60V
VCEO:-50V
VEBO:-5V
Collector-Base Voltage:700v
Junction Temperature:150 ℃
Emitter-Base Voltage:9V
PC:1.25W
Junction Temperature:150 ℃
Storage Temperature:-55-150℃
Collector Current -Continuous:3A
VCEO:30V
VCBO:40V
Collector Power Dissipation:1.5W
Junction Temperature:150 ℃
VCBO:600V
VCBO:40V
VCEO:30V
VEBO:6V
Collector-Base Voltage:700v
Collector-Emitter Voltage:400v
Collector Current -Continuous:1.5a
VCBO:-40V
VCEO:-30V
Storage Temperature:-55-150℃