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Mosfet Power Transistor
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Tip Power Transistors
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Silicon Power Transistor
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Dual Switching Diode
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Mos Field Effect Transistor
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Dual Channel Mosfet
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Fast Recovery Rectifier Diode
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Power Zener Diode
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High Voltage Rectifier Diode
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Semiconductor Triode
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Voltage Stabilizer IC
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power switch transistor online manufacture

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HXY2308 N Channel Mos Field Effect Transistor SOT-23 Plastic Encapsulated
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SOT-23 Plastic-Encapsulate MOSFETS HXY2308 N-Channel MOSFET Product Summary VDSS= V ID= 3.0 A 60 RDS(on) 120m@ 10 V < VGS = RDS(on) < 136m@VGS = 4.5V FEATURE High power and current handing capability Lead free ... Read More

2019-09-02 19:36:59

HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate
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SOT-23 Plastic-Encapsulate MOSFETS HXY2312 N-Channel 20-V(D-S) MOSFET Product Summary ID= 6.0 A VDSS=20v RDS(on) Read More

2019-09-06 17:22:25

2N7002 Enhancement Mode Field Effect Transistor VDSS 20v ID 6.0 A
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SOT-23 Plastic-Encapsulate MOSFETS 2N7002 Product Summary ID= 6.0 A VDSS=20v RDS(on) Read More

2019-08-15 18:09:08

60V Mos Field Effect Transistor N Channel AlphaSGT HXY4264 Silicon Material
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60V N-Channel AlphaSGT HXY4264 Product Summary VDS 60V ID (at VGS=10V) 13.5A RDS(ON) (at VGS=10V) < 9.8m RDS(ON) (at VGS=4.5V) < 13.5m General Description Trench Power AlphaSGTTM technology Low RDS(ON) Low Gate ... Read More

2019-09-06 20:18:31

HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET configurationis ideal for low ... Read More

2019-08-29 11:05:20

HXY4812 High Current Mosfet Switch Dual N Type High Performance
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HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM ... Read More

2019-09-05 14:58:02

HXY4616 30V Mosfet Driver Using Transistor 30v VDS 150℃ Junction Temperature
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configurationis ideal for low ... Read More

2019-08-29 15:14:01

TIP32/32A/32B/32C High Frequency Semiconductor Triode Collector Power Dissipation 2W
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TO-220-3L Plastic-Encapsulate Transistors TIP32/32A/32B/32C FEATURE Medium Power Linear Switching Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter TIP31 TIP31A TIP31B TIP31C Unit ... Read More

2019-09-09 12:25:59

9435A -30V P-Channel Enhancement Mode MOSFET
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-30V P-Channel Enhancement Mode MOSFET Description General Description: The 9435A is the single P-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and ... Read More

2019-08-30 18:56:00

5N20DY 200V N-Channel Enhancement Mode MOSFET
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5N20D / Y 200V N-Channel Enhancement Mode MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level ... Read More

2019-08-23 17:30:49

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Mosfet Power Transistor

Tip Power Transistors

Silicon Power Transistor

Dual Switching Diode

Mos Field Effect Transistor

Dual Channel Mosfet

Fast Recovery Rectifier Diode

Power Zener Diode

Schottky Bridge Rectifier

High Voltage Rectifier Diode

Semiconductor Triode

Voltage Stabilizer IC