high voltage transistor online manufacture

SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol ... Read More

SOT-89-3L Plastic-Encapsulate Transistors A92 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A92 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol ... Read More

SOT-89-3L Plastic-Encapsulate Transistors A94 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A94 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol ... Read More

SOT-89-3L Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) FEATURE Power dissipation Marking :A94 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V ... Read More

TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR (NPN) FEATURE Power Switching Applications MARKING 13002B=Device code Solid dot=Green molding compound device, if none,the normal device XXX=Code ... Read More

SOT-89-3L Plastic-Encapsulate Transistors 2SD965A 2SD965A FEATUREAudio amplifierFlash unit of cameraSwitching circuit Marking :D965A MAXIMUM RATINGS (Ta=25 unless otherwise noted) SymbolParameterValueUnitVCBOCo... Read More

G40N10 100V Mosfet Power Transistor , N Channel Transistor Fast Switching Product Summary The G40N10 uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages ... Read More

5N20D / Y 200V N-Channel Enhancement Mode MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level ... Read More

18N20X 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device ... Read More

HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET configurationis ideal for low ... Read More