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2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

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2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit
2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

Large Image :  2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: 2SA1015
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

Description
Product Name: Semiconductor Triode Type Application: Mobile Power Supply/ Led Driver/motor Control
Material: Silicon Emitter-Base Voltage: 6V
Case: Tape/Tray/Reel VCBO: -50v

SOT-89-3L Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP)

 

 

 

FEATURE

Ÿ Power dissipation

 

 

 

MARKING

A1015=Device code

Solid dot=Green molding compound device, if none,the normal device

Y=Rank of hFE, XXX=Code

2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit 0

 

 

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
2SA1015 TO-92 Bulk 10000
2SA1015-TA TO-92 Tape 2000

 

MAXIMUM RATINGS (Ta=25Š unless otherwise noted)

 

Symbol Para meter Value Unit
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -150 mA
PD Collector Power Dissipation 400 mW
R0 JA Thermal Resist ance from Junction to Ambient 312 Š / W
Tj Junction Temperature 150 Š
Tstg St orage Temperature -55 ~+150 Š

 

 

Ta=25 Š unless otherwise specified

 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= -100µA, IE=0 -50     V
Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -50     V
Emitter-base breakdown voltage V(BR)EBO IE= -100µA, IC=0 -5     V
Collector cut-off current ICBO VCB= -50V,IE=0     -0.1 µA
Collector cut-off current ICEO VCE= -50V, IB=0     -0.1 µA
Emitter cut-off current IEBO VEB= -5V, IC=0     -0.1 µA
DC current gain hFE VCE= -6V, IC= -2mA 70   700  
Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB= -10mA     -0.3 V
Base-emitter saturation voltage VBE(sat) IC= -100mA, IB= -10mA     -1.1 V
Transition frequency fT VCE= -10 V, IC= -1mA f =30MHz 80     MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz     7 pF
Noise figure NF VCE= -6 V, IC= -0.1mA, f =1kHz,RG=10kK     6 dB

 

 

CLASSIFICATION OF hFE1

Rank O Y GR BL
Range 70-140 120-240 200-400 350-700

 
 
Typical Characteristics
 
2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit 1

2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit 2

2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit 3

2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit 4


 
 

 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430   0.135  
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0   1.600   0.063
h 0.000 0.380 0.000 0.015

 

 
 
 SOT-89-3L Suggested Pad Layout
 
2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit 5


TO-92 Suggested Pad Layout
2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit 6

 

 

 


TO-92 7DSH DQG 5HHO

2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit 7

2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit 8

2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit 9

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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