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Product Details:
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| Features: | Surface Mount Package | Product Name: | Mosfet Power Transistor |
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| Type: | Mosfet Transistor | Product ID: | 20G04S |
| VDS: | 40V | VGS: | ±20v |
| High Light: | high current mosfet switch,high voltage transistor |
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HXY4616 30V Complementary MOSFET
Description
The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET configurationis ideal for low Input Voltage inverter applications.
A. The value of RθJA is measured with the device mounted on 1in A =25°C. The value in any given application depends on the user's specific board design.2 FR-4 board with 2oz. Copper, in a still air environment with T
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
Contact Person: Mr. David Lee
Tel: +86 13417075252
Fax: 86-755-83232335
