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HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v

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HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v

HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v
HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v

Large Image :  HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: HXY4616
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v

Description
Features: Surface Mount Package Product Name: Mosfet Power Transistor
Type: Mosfet Transistor Product ID: HXY4616
VDS: 40V VGS: ±20v

HXY4616 30V Complementary MOSFET

 

Description

 

The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET configurationis ideal for low Input Voltage inverter applications.

HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v 0

 

HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v 1

 

 

N-Channel Electrical Characteristics (T=25°C unless otherwise noted)
 
 
HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v 2
 

A. The value of RθJA is measured with the device mounted on 1in A =25°C. The value in any given application depends on the user's specific board design.2 FR-4 board with 2oz. Copper, in a still air environment with T

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.

D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

 

N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
 
 
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Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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