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20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET

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20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET

20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET
20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET

Large Image :  20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: 20G04S
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET

Description
Features: Surface Mount Package Product Name: Mosfet Power Transistor
Type: Mosfet Transistor Product ID: 20G04S
VDS: 40V VGS: ±20v

20G04S 40V N+P-Channel Enhancement Mode MOSFET

 

Description

The 20G04S uses advanced trench

technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a

level shifted high side switch, and for a host of other

applications

 

General Features

N-Channel

VDS =40V,ID =20A

RDS(ON) < 35mΩ @ VGS=10V

RDS(ON) < 42mΩ @ VGS=4.5V

P-Channel

VDS =-40V,ID = -18A

RDS(ON) <40mΩ @ VGS=-10V

RDS(ON) < 70mΩ @ VGS=-4.5V

High power and current handing capability

Lead free product is acquired

Surface mount package

 

Application

● Power switching application

● Hard Switched and High Frequency Circuits

● Uninterruptible Power Supply

 

 

Package Marking and Ordering Information

 

20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET 0

Absolute Maximum Ratings (TC=25℃unless otherwise noted)
 
20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET 1
N-CH Electrical Characteristics (TA=25℃unless otherwise noted)

 

20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET 2

 

 

P-CH Electrical Characteristics (TA=25℃unless otherwise noted)
 
20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET 3
 
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
 
N-Channel Typical Characteristics
 
20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET 420G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET 520G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET 620G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET 720G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET 820G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET 9
20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET 10
 
 
 
 
P-Channel Typical Characteristics
 
20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET 1120G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET 1220G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET 1320G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET 1420G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET 1520G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET 16
 
 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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