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Mosfet Power Transistor
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Tip Power Transistors
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Silicon Power Transistor
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Dual Switching Diode
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Mos Field Effect Transistor
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Dual Channel Mosfet
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Fast Recovery Rectifier Diode
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Power Zener Diode
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Schottky Bridge Rectifier
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High Voltage Rectifier Diode
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Semiconductor Triode
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Voltage Stabilizer IC
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high voltage transistor online manufacture

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HXY4404 Mos Field Effect Transistor Low Gate Charge For Switching Application
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60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 8.5A RDS(ON) (at VGS=10V) < 24m RDS(ON) (at VGS = 4.5V) < 30m RDS(ON) (at VGS = 2.5V) < 48m General Description The HXY4404 uses advanced ... Read More

2019-09-06 18:40:42

9435A -30V P-Channel Enhancement Mode MOSFET
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-30V P-Channel Enhancement Mode MOSFET Description General Description: The 9435A is the single P-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and ... Read More

2019-08-30 18:56:00

60N06HX 60V Mos Field Effect Transistor N Channel Enhancement Mode MOSFET
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60N06HX 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This ... Read More

2019-08-21 18:11:54

5G03SIDF 30V Dual Mosfet Switch Surface Mount Low Gate Charge
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5G03SIDF 30V N+P-Channel Enhancement Mode MOSFET Description The 5G03S/DF uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level ... Read More

2019-08-29 17:55:22

NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET
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NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET Read More

2019-09-03 14:51:07

HXY4407 30V P-Channel MOSFET
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HXY4407 30V P-Channel MOSFET Description A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application ... Read More

2019-08-30 18:35:12

HXY4409 30V P-Channel MOSFET
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HXY4409 30V P-Channel MOSFET Description A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application ... Read More

2019-09-05 14:51:58

HXY4435 30V P-Channel MOSFET
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HXY4435 30V P-Channel MOSFET Description A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application ... Read More

2019-08-30 20:59:59

HXY4441 30V P-Channel MOSFET
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HXY4441 30V P-Channel MOSFET Description A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application ... Read More

2019-09-05 10:35:01

TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type
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TO-92 Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) FEATURE High voltage MARKING A42=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE XXX=Code ORDERING ... Read More

2019-09-06 11:52:00

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Mosfet Power Transistor

Tip Power Transistors

Silicon Power Transistor

Dual Switching Diode

Mos Field Effect Transistor

Dual Channel Mosfet

Fast Recovery Rectifier Diode

Power Zener Diode

Schottky Bridge Rectifier

High Voltage Rectifier Diode

Semiconductor Triode

Voltage Stabilizer IC