Home ProductsMosfet Power Transistor

WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

Certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
Customer Reviews
we cooperation with Hua Xuan Yang is largely due to their professionalism, their keen response to the customization of the products we need, the settlement of all our needs and, above all, They provision of quality services.

—— —— Jason from Canada

Under the recommendation of my friend, we know about Hua Xuan Yang, a senior expert in the semiconductor and electronic components industry, which has enabled us to reduce our precious time and not have to venture try other factories.

—— —— Виктор from Russia

I'm Online Chat Now

WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

Large Image :  WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: WSF6012.
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

Description
Product Name: Mosfet Power Transistor Junction Temperature:: 150℃
Material: Silicon Model Number: WSF6012
Case: Tape/Tray/Reel Type: Mosfet Transistor
High Light:

n channel mosfet transistor

,

high voltage transistor

QM4803D​ N-Ch and P-Channel MOSFET
 

 

Description

 

The WSF6012 is the highest performance

trench N-ch and P-ch MOSFET with extreme

high cell density , which provide excellent

RDSON and gate charge for most of the

synchronous buck converter applications .

 

The WSF6012 meet the RoHS and Green

Product requirement , 100% EAS

guaranteed with full function reliability

approved.

 

 

Features
 
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available

 

 

Applications

 

  • z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
  • z Networking DC-DC Power System
  • z CCFL Back-light Inverter

 

 

Product Summery
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge 0
 
 
 
Absolute Maximum Ratings

 

WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge 1

 

 

Thermal Data
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge 2
 
 
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
 
 WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge 3
 
 
 
Guaranteed Avalanche Characteristics
 
 
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge 4
 
 
Diode Characteristics
 
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge 5
 
 
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
 
 
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
 
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge 6
 
Guaranteed Avalanche Characteristics​
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge 7
 
 
Diode Characteristics
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge 8
 
 
Note :
1. The data tested by surface mounted on a 1 inch2
FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
 
 
N-Channel Typical Characteristics
 
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge 9WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge 10WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge 11WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge 12
 
 
 
P-Channel Typical Characteristics
 
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge 13WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge 14WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge 15WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge 16
 
 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

Send your inquiry directly to us (0 / 3000)

Leave a Message

We will call you back soon!