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Product Details:
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| Product Name: | Dual Mosfet Switch | Model: | AP50N10D |
|---|---|---|---|
| Pack: | TO-252 | Marking: | AP50N10D XXX YYYY |
| VDSDrain-Source Voltage: | 100V | VGSGate-Sou Rce Voltage: | ±20V |
| High Light: | n channel mosfet transistor,high voltage transistor |
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AP50N10D Dual Mosfet Switch / 50A 100V TO-252 High Power Transistor
Dual Mosfet Switch applications
Switch Mode Power Supplies (SMPS)
Residential, commercial, architectural and street lighting
DC-DC converters
Motor control
Automotive applications
Dual Mosfet Switch Description:
The AP50N10D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V.
This device is suitable for use as a
Battery protection or in other Switching application.
Dual Mosfet Switch Features
VDS = 100V ID =50A
RDS(ON) < 25mΩ@ VGS=10V
Package Marking and Ordering Information
| Product ID | Pack | Marking | Qty(PCS) |
| AP50N10D | TO-252 | AP50N10D XXX YYYY | 2500 |
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
| Symbol | Parameter | Limit | Unit |
| VDS | Drain-Source Voltage | 100 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current-Continuous | 50 | A |
| I (100℃) | Drain Current-Continuous(TC=100℃) | 21 | A |
| IDM | Pulsed Drain Current | 70 | A |
| PD | Maximum Power Dissipation | 85 | W |
| Derating factor | 0.57 | W/℃ | |
| EAS | Single pulse avalanche energy (Note 5) | 256 | mJ |
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 To 175 | ℃ |
| RθJC | Thermal Resistance, Junction-to-Case (Note 2) | 1.8 | ℃/W |
Electrical Characteristics (TC=25℃unless otherwise noted)
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V ID=250μA | 100 | - | V | |
| IDSS | Zero Gate Voltage Drain Current | VDS=100V,VGS=0V | - | - | 1 | μA |
| IGSS | Gate-Body Leakage Current | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS,ID=250 μA | 1 | 3 | V | |
| RDS(ON) |
Drain-Source On-State Resistance |
VGS=10V, ID=20A | - | 24 | 28 | mΩ |
| RDS(ON) |
Drain-Source On-State Resistance |
VGS=4.5V, ID=10A | - | 28 | 30 | mΩ |
| gFS | Forward Transconductance | VDS=5V,ID=10A | - | 15 | - | S |
| Clss | Input Capacitance | VDS=25V,VGS=0V, F=1.0MHz |
- | 2000 | - | PF |
| Coss | Output Capacitance | - | 300 | - | PF | |
| Crss | Reverse Transfer Capacitance | - | 250 | - | PF | |
| td(on) | Turn-on Delay Time | VDD=50V,RL=5Ω VGS=10V,RGEN=3Ω |
- | 7 | - | nS |
|
r t |
Turn-on Rise Time | - | 7 | - | nS | |
| td(off) | Turn-Off Delay Time | - | 29 | - | nS | |
|
f t |
Turn-Off Fall Time | - | 7 | - | nS | |
| Qg | Total Gate Charge | VDS=50V,ID=10A, VGS=10V |
- | 39 | - | nC |
| Qgs | Gate-Source Charge | - | 8 | - | nC | |
| Qgd | Gate-Drain Charge | - | 12 | - | nC | |
| VSD | Diode Forward Voltage (Note 3) | VGS=0V,IS=20A | - | - | 1.2 | V |
|
S I |
Diode Forward Current (Note 2) | - | - | - | 30 | A |
|
rr t |
Reverse Recovery Time |
TJ = 25°C, IF = 10A di/dt = 100A/μs(Note3) |
- | 32 | - | nS |
| Qrr | Reverse Recovery Charge | - | 53 | - | nC | |
| ton | Forward Turn-On Time |
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |
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Notes:
1,Repetitive Rating: Pulse width limited by maximum junction temperature.
2,Surface Mounted on FR4 Board, t ≤ 10 sec.
3,Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
4,Guaranteed by design, not subject to production
5,EAS Condition : Tj=25 ℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω, IAS=32A
Attention
1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.
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